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this is information on a product in full production. november 2012 doc id 022225 rev 2 1/13 13 STY100NM60N n-channel 600 v, 0.028 typ., 98 a mdmesh? ii power mosfet in a max247 package datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel power mosfet developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d STY100NM60N 650 v < 0.029 98 a max247 1 2 3 !-v $ ' 3 table 1. device summary order code marking package packaging STY100NM60N 100nm60n max247 tube www.st.com
contents STY100NM60N 2/13 doc id 022225 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STY100NM60N electrical ratings doc id 022225 rev 2 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 98 a i d drain current (continuous) at t c = 100 c 62 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 392 a p tot total dissipation at t c = 25 c 625 w dv/dt (2) 2. i sd 98 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss . peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.2 c/w r thj-amb thermal resistance junction-ambient max 30 c/w t j maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 15 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar , v dd =50) 757 mj
electrical characteristics STY100NM60N 4/13 doc id 022225 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified). table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 10 150 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 49 a 0.028 0.029 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 9600 850 50 - pf pf pf c oss(eq) (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as coss when v ds increases from 0 to 80% v ds equivalent output capacitance v ds = 0 to 480 v v gs = 0 - 1602 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.3 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 98 a, v gs = 10 v (see figure 15 ) - 330 40 174 - nc nc nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 49 a, r g = 4.7 , v gs = 10 v (see figure 16 ) and (see figure 19 ) - 45 52 372 81 - ns ns ns ns
STY100NM60N electrical characteristics doc id 022225 rev 2 5/13 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 98 392 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 98 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 98 a, di/dt = 100 a/s v dd = 60 v (see figure 16 ) - 622 16.5 52.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 98 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 16 ) - 820 27 66 ns c a
electrical characteristics STY100NM60N 6/13 doc id 022225 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 10 s tj=150c tc=25c s inlge p u l s e 1m s 0.1 100 10m s am15 38 6v1 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 am09125v1 i d 120 8 0 40 0 0 4 v d s (v) 12 (a) 160 4v 5v v g s =10v 6v 16 7v 1 8 8 200 240 am15 3 91v1 i d 120 8 0 0 0 4 v g s (v) (a) 160 40 2 v d s =10 v 6 8 200 240 am15 38 4v1 v g s 6 4 2 0 0 50 q g (nc) (v) 8 100 150 10 v dd =4 8 0v 200 250 12 3 00 3 00 200 100 0 400 500 v d s (v) i d =9 8 a v d s am15 38 9v1 r d s (on) 0.0275 0.0270 0.0265 0.0260 0 8 0 i d (a) ( ) 40 0.02 8 0 0.02 8 5 20 60 100 v g s = 10 v 0.0290 0.0295 am15 3 94v1
STY100NM60N electrical characteristics doc id 022225 rev 2 7/13 figure 8. capacitance variations figure 9. normalized on-resistance vs temperature figure 10. normalized gate threshold voltage vs temperature figure 11. normalized b vdss vs temperature figure 12. source-drain diode forward characteristics figure 13. output capacitance stored energy c 1000 10 0.1 1 v d s (v) (pf) 10 ci ss co ss cr ss 100 100 10000 am15 38 5v1 r d s (on) 1.5 1. 3 0.7 0.5 -50 0 t j (c) (norm) -25 25 50 0.9 1.1 i d = 49 a 75 100 1.7 1.9 2.1 am15 38 7v1 t j (c) i d =250 a 1.05 0.90 0.75 0.70 -50 0 -25 25 50 0. 8 0 0. 8 5 v g s (th) (norm) 75 100 125 0.95 1.00 am15 3 9 3 v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 v s d 0 20 i s d (a) (v) 60 40 0 0.2 0.4 0.6 t j =-50c t j =150c t j =25c 0. 8 8 0 1 1.2 1.4 am15 3 91v1 e o ss 3 0 20 10 0 0 100 v d s (v) ( j) 400 40 200 3 00 50 60 500 600 am15 3 90v1
test circuits STY100NM60N 8/13 doc id 022225 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STY100NM60N package mechanical data doc id 022225 rev 2 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STY100NM60N 10/13 doc id 022225 rev 2 table 9. max247 mechanical data dim. mm min. typ. max. a4.70 5.30 a1 2.20 2.60 b1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c0.40 0.80 d 19.70 20.30 e5.35 5.55 e 15.30 15.90 l 14.20 15.20 l1 3.70 4.30
STY100NM60N package mechanical data doc id 022225 rev 2 11/13 figure 20. max247 drawing 0094 33 0_rev_d
revision history STY100NM60N 12/13 doc id 022225 rev 2 5 revision history table 10. document revision history date revision changes 14-sep-2011 1 first release. 05-nov-2012 2 document status promoted from preliminary to production data. added section 2.1: electrical characteristics (curves) . minor text changes.
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